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| Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 6.5 V A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 50 TC = 25C Maximum Ratings TO-252 (IXTY) 500 500 30 40 1.6 2.5 1.6 5 75 10 43 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns G G S (TAB) TAB TO-220 (IXTP) W C C C C C DS (TAB) D = Drain TAB = Drain G = Gate S = Source 1.6 mm (0.062 in.) from case for 10s Maximum tab temperature for soldering TO-252 package for 10s Mounting torque (TO-220) TO-252 TO-220 300 260 Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Md Weight 1.13/10 Nm/lb.in. 0.8 4 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 500 3.0 5.5 100 5 50 6.5 V V nA A A VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99441(09/05) IXTP 1R6N50P IXTY 1R6N50P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 0.7 1.4 140 VGS = 0 V, VDS = 25 V, f = 1 MHz 20 2.6 10 VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 RG = 20 (External) 16 25 16 3.9 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 1.4 1.3 S pF pF pF ns ns ns ns nC nC nC 2.9 K/W Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21 Inches Min. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 Max. 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 TO-252 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC VDS= 20 V; ID = 0.5 ID25, pulse test 2.28 BSC 4.57 BSC 9.40 0.51 0.64 0.89 2.54 10.42 1.02 1.02 1.27 2.92 0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 1.6 2.5 1.5 A A V H L L1 L2 L3 IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 1.6 A, -di/dt = 100 A/s VR = 100V 400 TO-220 Outline ns Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTP 1R6N50P IXTY 1R6N50P Fig. 1. Output Characteristics @ 25C 1.6 1.4 1.2 VGS = 10V 8V 7V 2.7 2.4 2.1 VGS = 10V 8V 7V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 1.0 0.8 6V 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 5V I D - Amperes 1.8 1.5 1.2 6V 0.9 0.6 0.3 0.0 0 3 6 9 12 15 18 21 24 27 30 5V V D S - Volts Fig. 3. Output Characteristics @ 125C 1.6 1.4 1.2 VGS = 10V 7V 3.00 2.75 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2.50 2.25 2.00 I D = 1.6A 1.75 1.50 1.25 1.00 0.75 0.50 I D = 0.8A I D - Amperes 1.0 6V 0.8 0.6 0.4 5V 0.2 0.0 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.0 2.8 2.6 VGS = 10V TJ = 125 C 1.8 1.6 1.4 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0.4 0.8 1.2 1.6 2 2.4 2.8 TJ = 25 C TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature R D S ( o n ) - Normalized I D - Amperes 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 I D - Amperes (c) 2005 IXYS All rights reserved TC - Degrees Centigrade IXTP 1R6N50P IXTY 1R6N50P Fig. 7. Input Adm ittance 2.0 1.8 1.6 2.2 2.0 1.8 1.6 Fig. 8. Transconductance g f s - Siemens I D - Amperes 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4 4.5 5 5.5 6 6.5 TJ = 125 C 25 C -40 C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 TJ = -40 C 25 C 125 C V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 5.0 4.5 4.0 10 9 8 7 VDS = 250V I D = 0.8A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 3.5 VG S - Volts TJ = 25 C 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.5 0.6 0.7 0.8 0.9 TJ = 125 C 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V S D - Volts Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 10 TJ = 150 C Fig. 11. Capacitance 1000 f = 1MHz Capacitance - picoFarads C iss 100 C oss R DS(on) Limit TC = 25 C I D - Amperes 1 25s 100s 10 C rss DC 1ms 10ms 1 0 5 10 15 20 25 30 35 40 0.1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 V D S - Volts 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 |
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